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 BAS21H_2 ? NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 3 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 5. Limiting values [1] Pulse test: tp ≤ 300 μs; δ≤0.02. [2] Tj =25°C prior to surge. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Re?ow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 250 V VR reverse voltage - 200 V IF forward current [1]- 200 mA IFRM repetitive peak forwardtp= 1 ms; current δ = 0.25 - 625 mA IFSM non-repetitive peak forwardsquare wave current [2] tp=1μs-9A tp = 100 μs-3A tp =10ms - 1.7 A Ptot total power dissipation Tamb ≤ 25 °C [3] - 375 mW Tj junction temperature - 150 °C Tamb ambient temperature ?65 +150 °C Tstg storage temperature ?65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] - - 330 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 70 K/W |